SKU:22019821477
SiC - 4H (0001), 10x10x0.33 mm , Si Face, 1SP - SC4HZ1010033S1
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USA
- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
SiC - 4H (0001), 10x10x0.33 mm , Si Face, 1SP - SC4HZ1010033S1Specifications of Substrate Orientation: <0001> + 0. 5 Dimension: 10 x 10 x 0. 3 0. 33 + 0. 03 mm Polished: One sides epi polished on Si face Surface Roughness: < 10 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 05 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26 eV ( Indirect) Conductivity type: N TTV Bow Warp:
Wafer Containers
Instruction & Video
1/4" in diameter vacuum sealing assembly connects with rubber hose
Temperature 200 600 900 Cleavage 10
SiO2(single crystal quartz)
60 mm in Diameter Optional LSS024 WD-40 3-IN-ONE Professional White Lithium Grease
4 Pic
For detailed specification data sheet
Bulk density: 0
Cutting Section 30 mm x 30 mm Mount Vise The t-clamp vise is included for quick tightening or release Driving the Cut Manually push up
Please contact AA portable Power Corp for making the purchase
~50 Torr after 5 min pumping
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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