SKU:3318256618
InP, Growing Method: VGF(100) Zn doped,3 " x 0.625mm, wafer, 1sp
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Ships within 48 hours · Estimated delivery Jul 15 - Jul 20
Description
InP, Growing Method: VGF(100) Zn doped,3 " x 0.625mm, wafer, 1spInP single crystal wafer Orientation: (100)+ 0. 5 degree Primary Flat: US(01 1)+ 0. 5 degree Secondary Flat: US(011) Size: 3" diameter x 0. 625 mm Growing Method: VGF Doping: Zn doped Conducting type: S C Polish: one side polished Resistivity: (4. 19 4. 73)E 2 ohm. cm Mobility: 72 74 cmE2 V. S EPD: <5000 cmE2Carrier Concerntration: (1. 79 2. 07)E18 cmE 3 Ra(Average Roughness) : < 0. 4 nm EPI ready surface and packing
94mm Flatness = 0
Use the MSK-118A folding machine to partially fold the edge
Resistivity: 0
5o Edge // <001> & <010>
Fabrication: Wet Chemical
Corrosion resistance to Potassium Hydroxide
CTE (0-300 degree C): 3
400 300 pH 11
Material: Copper
4 Connections Red Light Rocker Switch for old model DZF
Polished: 2 sides polished
Maximum size
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