SKU:46926292540
VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cmGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 5 Deg. Wafer Size: 50(+ _0. 3) mm dia x 175(+ _15) microns Surface Polishing: Both sides polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 008 0. 021Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: N A Mobility: N A EPD:
Vacuum standing time 0 - 900 S Adjustable ( Vaccum level 10-2 torr)
Material: Natural ABS With ESD Coating
Size: 2" dia x 0
Fire retardant Compact Grade Laminate plates (Rear & side)
Should damages be found
Hardness: 5
20 mg / cm^2
7mm (ID) x 73
Size Distribution
please inform us and we may stop selling immediately
Resistivity: > 45 Ohms/cm (If you would like to measure the resistivity accurately
Resistivity: >40 Ohms/cm (If you would like to measure the resistivity accurately
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Your VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm orders ship within 1-2 business days.
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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