SKU:60313751365
VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3
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USA
- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3GaAs single crystal wafer Growing Method: VGF Orientation: (100) Size: 2" dia x 0. 5mm Polishing: One side polished Doping: Si doped Conductor type: N type Carrier Concentration: (0. 63 1. 33) x 10^18 cm^3 Mobility: (2170 2920) cm^2 V. S Resistivity: (2. 12 3. 55) E 3 ohm. cm EPD: < 5000cm^2 Ra(Average Roughness): < 0. 4 nm EPI ready surface and packing Related Products Other GaAs InSb Other InAs InP GaSb Wafer Box Film Coater RTP Furnaces
Solvents and chemicals used for electrospinning may be poisonous
Polished: one side polished optional
With lid close: 1055mm (L) × 300mm(W) × 400mm(H)
Please use MTI Brand Coin Cell Cases only with the crimper
The latest version of SYJ-160 is with the Protective Plexiglass shield
This aluminum foil also can be used as a substrate for Roll to Roll coating or Calendering in MSK-AFA-E200-UL Compact Roll to Roll Blade Coating System or Roll to Roll Heatable Calendar (10" Width) up to 80°C with Variable Speed - MSK-HRP-03RR
Timer Setting Range 1~1199 min Rotary Speed 10~70 rpm Tube Rack Two types of tube rack is included for immediate use:
you may order a Syringe Pump as Pic 1 below:
Through Hole Rate:
Temperature: 1200 °C (< 1 hr)
81) x10^17 /cm^3
Diamond film thickness: 2 microns
Quick Dispatch:
Your VGF-GaAs (100) N-type Si doped 2" dia x 0.5 mm, 1sp,cc:(0.63-1.17) x 10^18/cm^3 orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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