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SKU:68443876030
Ge Wafer - N-type Undoped, 2" dia x 0.5 mm, 1SP (111), R >50 ohm.cm - GEUc50D05C1R50US
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Ge Wafer - N-type Undoped, 2" dia x 0.5 mm, 1SP (111), R >50 ohm.cm - GEUc50D05C1R50USGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 2" dia x 500 microns Surface Finish(RMS or Ra): one side epi polished < 8 A ( by AFM) Doping: Undoped Conductor type: N type Resstivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 Density:
This series provides a safe and convenient packing and delivery solution for bare die
And then deionized water and absolute ethanol were used for 5 min each to ensure the surface of the Ni foam was well cleaned
Carbon Content:
The user is advised to wear protective clothing
OTF-1200X-SVN is a splittable vertical tube furnace without a processing tube for DIY a tubular reactor up to 2" and 1200oC working temperature
One KFD25 Adaptor is built in the chamber ( click picture left to see ) for connecting to the vacuum pump
Dimension: 100 x 100 x 3
The additional advantage is quite convenient in the process of cleaning and assembling
Surface roughness: < 5A
Orientation tolerance: +/-0
For operation at 110V AC
Orientation: (0001) +/-0
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Your Ge Wafer - N-type Undoped, 2" dia x 0.5 mm, 1SP (111), R >50 ohm.cm - GEUc50D05C1R50US orders ship within 1-2 business days.
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