SKU:68682054002
Si wafer (100), 3 "dia x 0.38 mm, 1sp, P type, B doped, resistivities: 1-10 ohm-cm
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- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
Si wafer (100), 3 "dia x 0.38 mm, 1sp, P type, B doped, resistivities: 1-10 ohm-cmSingle crystal Si Conductivity: P type ( B doped) Resistivity: 1~10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 3" diameter Thickness: 0. 381 + 0. 025 mm Orientation: (100) Polish: One side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner Wafer Containers
Chemical inertness and stability
87 nm and < 10 nm
Color of Cover/ Background: Transparent / Black
004mm) (Inside) (Melting Point: ~660ºC)
it is necessary to use dry or alcohol-based tool lubricant to lubricate the die and sleeve set to reduce friction during the compression
Displays total volume dispensed in mL or µL units
Die Sleeve Height: 50mm
5% molybdenum for improved resistance to corrosion from chlorides (found in salt
we can modify your tube furnace into evaporating coater
EQ-DHG-9000JB is a Mechanical Convection Ovens combine forced-air circulation to achieve dependable
Each program can have Max
Crystal growth method
Quick Dispatch:
Your Si wafer (100), 3 "dia x 0.38 mm, 1sp, P type, B doped, resistivities: 1-10 ohm-cm orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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