SKU:76908088186
InAs (100), P Type, Zn doped 2" dia x 0.5 mm, one side polished - IAZna50D05C1US5
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- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
InAs (100), P Type, Zn doped 2" dia x 0.5 mm, one side polished - IAZna50D05C1US52" InAs wafer (P type) 2" InAs wafer P Type, Zn doped Size: 2" dia x0. 5 mm + 20 microns Orientation: <100> + 0. 50 Polishing: one side polishd Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat <110> < 110> Doping Zn doped Conductivity type P type Carrier Concentration (3 7)E18 cm3 Mobility 100 500 cm2 V. S EPD <10000 cm 2
Material Feed Size
Length 47 1/4" (1200 mm) Detailed dimension drawing
Options Part 1: Holding Gold oscillators crystal
Click the video below to see the battery anode coated
constant power discharge (CP)
Application Notes Please note that this manual diamond saw is mainly for fast cutting
Polishing: One side polished
1 Optional Parts Option Oil-less Vacuum Pump
NPT-F Pipe
MsoNormalTable {mso-style-name:"Table Normal"
Operation instructions Options Click Picture below to order Heat-able and multi-channel Syringe Pump
fuel cell batteries
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