SKU:77494563294

GaSb, (100), Zn- doped, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration:(1-3)x10^17 cm^-3

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Regular price $315.10 USD
Regular price $346.10 USD Sale price $315.10 USD
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17

Description

GaSb, (100), Zn- doped, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration:(1-3)x10^17 cm^-3High quality GaSb single crystal wafers for semiconductor industries. Size: 2" diameter x 0. 45mm, Orientation: (100) Dopping: Zn doped, Conducting type: P type. Carrier concentration:(1 3)x10^17 cm^ 3 EPD: < 10^4 cm ^ 2 Mobility: 200 500 cm^2 V. S Polish: one side polished. Grown by a special LEC technique Surface finish (RMS or Ra) : < 5A Typical Properties Crystal Structure: cubic a = 6. 095 Density: 5. 619 g cm3 Melting point: 710 oC Thermal

GaN orientation:                        C-plane (00

Low defect densities

Surface Polishing:             One side epi polished

Orientation:    (111)

10 pcs per package for minimum order

( +-05o) with Standard Flat

Each set includes 4 types of cutting ring at 8

Range 2: 0

The high efficiency polyester cartridge has an efficiency rating greater then 99% and cartridges are moisture resistant

Such an alumina tube can be used at operating temperatures to 1700 oC in both oxidizing and reducing atmospheres

Purity:            99%

2"  and 2

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