SKU:77494563294
GaSb, (100), Zn- doped, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration:(1-3)x10^17 cm^-3
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
GaSb, (100), Zn- doped, P-type, 2" dia x 0.45mm, 1sp,Carrier concentration:(1-3)x10^17 cm^-3High quality GaSb single crystal wafers for semiconductor industries. Size: 2" diameter x 0. 45mm, Orientation: (100) Dopping: Zn doped, Conducting type: P type. Carrier concentration:(1 3)x10^17 cm^ 3 EPD: < 10^4 cm ^ 2 Mobility: 200 500 cm^2 V. S Polish: one side polished. Grown by a special LEC technique Surface finish (RMS or Ra) : < 5A Typical Properties Crystal Structure: cubic a = 6. 095 Density: 5. 619 g cm3 Melting point: 710 oC Thermal
GaN orientation: C-plane (00
Low defect densities
Surface Polishing: One side epi polished
Orientation: (111)
10 pcs per package for minimum order
( +-05o) with Standard Flat
Each set includes 4 types of cutting ring at 8
Range 2: 0
The high efficiency polyester cartridge has an efficiency rating greater then 99% and cartridges are moisture resistant
Such an alumina tube can be used at operating temperatures to 1700 oC in both oxidizing and reducing atmospheres
Purity: 99%
2" and 2
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