SKU:81560753697
InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished10x10x0. 45 mm InSb wafer (P type, Ge doped) Size: 10x10x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Orientation Flat Doping Ge ndoped Conductivity type P type Carrier Concentration (0. 05 0. 50)E17@77K
please consider our Motorized Valve and Gauge
Bottom Frame -- Outside: 125×108 (mm)
Compact Spin Coater ( Max
Speed: RPM: 2480
KF40 Feedthrough with all necessary wire and tube are included to allow operating inside the Glovebox
Resistant to molten metal sparks and splashes
Removal Strength from Tab
35 mm (+/-0
Stainless Steel 304 or 316 case
The sample is cut through by manually push down the driving arm
6mA-3000mA) to one computer by using a transit device
Melting point: Does not melt congruently
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