SKU:81560753697

InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished

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Regular price $114.42 USD
Regular price $148.42 USD Sale price $114.42 USD
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  • USA
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17

Description

InSb (100) 10x10x 0.45 mm, P type, Ge doped, 1 side polished10x10x0. 45 mm InSb wafer (P type, Ge doped) Size: 10x10x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: one side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Orientation Flat Doping Ge ndoped Conductivity type P type Carrier Concentration (0. 05 0. 50)E17@77K

please consider our Motorized Valve and Gauge

Bottom Frame -- Outside:  125×108 (mm)

Compact Spin Coater ( Max

Speed:                 RPM: 2480

KF40 Feedthrough with all necessary wire and tube are included to allow operating inside the Glovebox

Resistant to molten metal sparks and splashes

Removal Strength from Tab

35 mm (+/-0

Stainless Steel 304 or 316 case

The sample is cut through by manually push down the driving arm

6mA-3000mA) to one computer by using a transit device

Melting point:                                                        Does not melt congruently

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Exchange/Return Notes
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