SKU:10860347394
InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
InSb (100) 5x5x 0.45 mm, P type, Ge doped, 1 side polished5x5x0. 45 mm InSb wafer (P type, Ge doped) Size: 10x10x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: one side side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Orientation Flat Doping Ge ndoped Conductivity type P type Carrier Concentration (0. 05 0. 50)E17@77K
Heating Rate: 20°C /min
2m 8x5mm clear PU tube(connect to the gas source)
Reference article: DIELECTRIC PROPERTIES AND ELECTRICAL CONDUCTIVITY STUDIES ON Gd3Ga5O12 SINGLE CRYSTALS
Wafer Size: 2" dia x 0
in 3000-5000 mPa·s
Must clean the machine after cutting to avoid corrosion
and the total time is not more than 6553s
Improper use is deemed to be all use for purposes deviating from those mentioned below
Example 5% carbon+ polymer
Click here to learn the installation of a gas regulator
Precision metering valves of stainless steel valves permits precise flow adjustments
High-profile silicon O-Rings (2 pcs) can withstand temperatures upto 250°C
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