SKU:1423594475
InSb (100) 5x5x 0.45 mm, P type, Ge doped, two side polished
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
InSb (100) 5x5x 0.45 mm, P type, Ge doped, two side polished10x10x0. 45 mm InSb wafer (P type, Ge doped) Size: 5x5x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: two sides polishd Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat N A Doping Ge Conductivity type P Type Carrier Concentration 1. 35x10^15 cc @77K Mobility 6300 cm2 Vs EPD <=200 cm 2 Resistivity: 7. 34E 1 ohm.
In contrast to the hydraulic crimper
5" Arbor Abrasive SiC Blade for Cutting Non-ferrous Metals
Orientation: (110) +/-0
079 (50 +/- 4 mm)
Orientation (100) +/- 0
High-strength glass as the front door for easy observation
5 mV per degree (°F or °C) analog output
For the properties of BK7
Chemical Composition Lithium Sulfide Li2S Purity Material Basis 99
Minimimum time interval: 100ms
ServiceLife 2000 hours
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