SKU:29003241466
Ge Wafer (111) 2" dia x 0.4 mm, 2SP, P type ( Ga doped) Resistivities: 0.035-0.039ohm-cm
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Ge Wafer (111) 2" dia x 0.4 mm, 2SP, P type ( Ga doped) Resistivities: 0.035-0.039ohm-cmGe Wafer Specification Growing Method: CZ Orientation: (111) + _0. 5 Deg. Wafer Size: 2" dia x 400 microns Surface Polishing: Two sides epi polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 035 0. 039 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:
1 x 10 -6 /oK
100sets/pack minimum order required
Crystal Purity
Operating Temperature 1200ºC Application Notes Vacuum pressures may only be safely used up to 1000°C
IF orientation: 90 degree cw
1mm-1mm5-120ppi
01 wt% Fe doped SrTiO3
polyester cartridge
9 x10^-3 ohm
This extension is required for the following applications:
The round side door on each side for easy access to the flange on the furnace
Thickness 16 +/- 1
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