SKU:29003241466

Ge Wafer (111) 2" dia x 0.4 mm, 2SP, P type ( Ga doped) Resistivities: 0.035-0.039ohm-cm

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Regular price $148.93 USD
Regular price $183.93 USD Sale price $148.93 USD
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17

Description

Ge Wafer (111) 2" dia x 0.4 mm, 2SP, P type ( Ga doped) Resistivities: 0.035-0.039ohm-cmGe Wafer Specification Growing Method: CZ Orientation: (111) + _0. 5 Deg. Wafer Size: 2" dia x 400 microns Surface Polishing: Two sides epi polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 035 0. 039 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure:

1 x 10 -6 /oK

100sets/pack  minimum order required

Crystal Purity

Operating Temperature 1200ºC Application Notes Vacuum pressures may only be safely used up to 1000°C

IF orientation: 90 degree cw

1mm-1mm5-120ppi

01 wt% Fe doped SrTiO3

polyester cartridge

9 x10^-3 ohm

This extension is required for the following applications:

The round side door on each side for easy access to the flange on the furnace

Thickness 16 +/- 1

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