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SKU:43409121053
Ge Wafer (111) Undoped, 1" dia x 0.5 mm ,2SP, R:>50 ohm.cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Ge Wafer (111) Undoped, 1" dia x 0.5 mm ,2SP, R:>50 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: two sides polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754
Built-in PTFE slurry slot with 180mm coating width to make coating material evenly distributed ahead of the blade
CdSe single crystal CdSe single crystal
It can rapidly heat the sample up to 500ºC
(please set the oven to 30C
Compliance CE certified Instruction Manual & Demo Application Note This device also can be used for mixing high viscosity slurry
15Mpa is included
Cap Terminal Length: 12
If you need small width 85mm for Screen Printing Coater
Anode: Anode Active+Acetylene Black (Conductive)+PVDF+NMP (or SBR+CMC)
because all pressing dies are made by high-stretched carbon steel for achieving high hardness to meet the essential requirements of making ceramic or metal samples
You may use silver glue stick spring with spacer to prevent moving
please click the image below to order
Quick Dispatch:
Your Ge Wafer (111) Undoped, 1" dia x 0.5 mm ,2SP, R:>50 ohm.cm orders ship within 1-2 business days.
Delivery Options:
- Standard: 3-7 business days
- Fast: 2-3 business days
- Express: 1-2 business days
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
- To process your return/exchange, please contact us at [email protected]
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