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SKU:56831576349
Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50US
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Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Ge Wafer Undoped (100) 3" dia x 0.5 mm 1 side polished resistivity: >50 ohm-cm - GEUa76D05C1R50USGe Wafer Specification Growing Method: CZ Orientation: (100) + 0. 5 Deg. Wafer Size: 3" dia x 0. 5 mm Surface Polishing: one side optical polished Surface finish (RMS or Ra) : < 30A Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room in wafer container Related Product Other
Crystal Boundary: 45o ( +/-0
079 (50 +/- 4 mm)
Specifications Material SS304 or SS316
Professional-grade blades with the continuous rim are designed for lapidary materials
the ceramic tube can be inserted into the tube with a vacuum-sealed on the flange
Saturation magnetization Ms: 4
156 x 106 mm printing area with precision position adjustable at three-dimension and vacuum chunk to load and unload substrate easily
please consider to consumable PE jar
Orientation: (100)
The microwave furnace is good for rapid heating at a short time of less than 10 minutes
BST8-WA is an eight-channel battery analyzer to analyze small coin cells and cylindrical batteries from 0
Pressing Die (Optional) Pressing dies with various diameters are available upon request at extra cost
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