InAs (111)A, P Type, Zn doped 10x10 x 0.45 mm, one side polished

InAs (111)A, P Type, Zn doped 10x10 x 0.45 mm, one side polished2" InAs wafer (P type) 2" InAs wafer P Type, Zn doped Size: 10x10x0. 45 mm + 20 microns Orientation: <111>A Polishing: one side polishd Resistivities: 5. 1x10^ 2 ohm cm Packing: in 1000 class clean room with wafer container Properties Growth method LEC Orientation (111) A Orientation Flat SEMI Doping Zn doped Conductivity type P type Carrier Concentration 6. 4E17 cm3 Mobility 192 cm2 V. S Resistivity 5. 1x10^ 2 Ohm Cm EPD 1. 9E4 cm 2

This furnace module (liner&heating elements inside) is designed for easy replacement of the KSL-1200X-J-UL liner and heating elements

100sets/pack  minimum order required

Please Do not use tap water directly

working temperature 1200°C Dimension TBD Tube Size  2" ( 50 mm ) or

Crystal Frequency: 6 MHz with a resolution of 0

Heat Flow thru Glass: clear glass at 22 deg C/air space/clear glass at 4 C: 64 W/m^2

Always clean the machine after using each time

Aluminum Oxide Substrates Al2O

Decay time (ns)

Easy to read design - The direct reading scales eliminate troublesome conversions

This 4" tube flange is specially made for CVD applications where customers need a dual tube configuration

037 Å for this equipment)