SKU:53434731450
InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
InSb (100) 2" dia x 0.45 mm, Te doped, N type, 1 side polished - ISTea50D045C1US2" InSb wafer (N type, Te Doped ) Size: 2" dia x 0. 45 (+ 0. 025 ) mm thick Orientation: <100> + 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 100 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat Two reference flates at <100> Doping Te Conductivity type N type Carrier Concentration (@77 K) (0. 19 0. 50)E18 cc @77K Resistivities (ohm cm): 0. 0005 0. 001 Mobility
2 to order)
High-strength glass as the front door for easy observation
and epoxy are not included
Size: 2 " x 2 " x 1 mm thickness
3 Pressure
Type: N-type
5 thread) for thermocouple inserted
Plasma Cleaner
Spinning Time: 1 - 60s
less sub-surface damage
5MPa -- to ensure the can does not explode)
Net weight: 5
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