SKU:54010999064
VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 1SP, P type ( Ga doped)
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- USA
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 1SP, P type ( Ga doped)Ge Wafer Specification Growing Method: VGF Orientation: (100) + 0. 5 Deg. Wafer Size: 100(+ 0. 4) mm dia x 175(+ 25) microns Surface Polishing: One side polished Surface roughness: < 8 A Doping: Ga Doped Conductor type: P type Resistivity: (0. 182 0. 327) Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: (0. 92 4. 13) E16 c. c Mobility: (1520
Secondary Flat: US(011)
Soft Aluminum Foil (ALM): 8021 or 8079
Front Surface Finish (Ga Face)
and quenching tests
The pressure inside the tube chamber will be kept within the desired range
Note: SrTiO3 (100) 10x10x0
KF-50 or KF-25 gate valve for high vacuum sealing
Micrometer Head
This Healing element is designed for MTI furnaces only
Formation conditions: 25°C
Please use our 3'' Dia
229 mm frame width ( ~ 9
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Your VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 1SP, P type ( Ga doped) orders ship within 1-2 business days.
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- Fast: 2-3 business days
- Express: 1-2 business days
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