SKU:61200322747
VGF-Ge Wafer (100) with 6 degree miscut toward <111> , 100 mm dia x 0.5 mm, 1SP, P type (Ga doped), R: 0.3-0.33 Ohm.cm - GEGaa100D05C1deg6VGFR03US
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Ships within 48 hours · Estimated delivery Jul 13 - Jul 18
Description
VGF-Ge Wafer (100) with 6 degree miscut toward <111> , 100 mm dia x 0.5 mm, 1SP, P type (Ga doped), R: 0.3-0.33 Ohm.cm - GEGaa100D05C1deg6VGFR03USGe Wafer Specification Growing Method: VGF Orientation: VGF Ge Wafer (100) with 6 degree miscut toward<111> Wafer Size: 100 mm dia x 500 microns Surface Polishing: One side polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 3 0. 33 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: (1. 01 1. 03)
Place the irregular substrate on the adhesive tape
white and green
Dimension: 100 mm (+/-0
The flange is designed for MTI 4" (100mm O
Knoop Hardness 590Hk
One end is 1/4'' tube fitting
Application Notes Please click here to learn how to use and maintain an alumina tube in MTI high-temperature tube furnace
Note: MTI does NOT carry AG5 cell cases
Loading Current: 10A
Heating Element for YLJ-HP88V
and plasticity as well as good conductivity and adhesion under high temperatures
self-lubrication and plasticity as well as good conductivity and adhesion under high temperature
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