SKU:68261258090
Si Wafer (111), 2" dia x 0.279 mm, 1SP, N type, P doped, R:1-10 ohm-cm - SIPc50D0279C1R1
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- USA
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
Si Wafer (111), 2" dia x 0.279 mm, 1SP, N type, P doped, R:1-10 ohm-cm - SIPc50D0279C1R1Single crystal Silicon Conductive type: N type P doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 279 + 0. 025 mm Orientation: (111) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner
Voltage and Power AC 110V/220V switchable for worldwide usage
SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies
The Feedthrough with an extension power cord is designed for using MSK-160E inside a glovebox
Operating Temperature 400°C Temperature control Digital programmable temperature controll with 28 segement with +/- 1oC accuracy
Titanium nitride (TiN)
or corrosive
Size: 10x10 x 0
99% (horizontal polymer strip is made of modified polypropylene (PP) and polyethylene naphthalate (PEN)) Length 61mm Width 4mm Thickness 0
B: ~1% Melting Point > 600 °C Color Silver
The cutting pressure is adjustable with a digital display
Length: 56mm
Density: 7
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