SKU:75570853154
Si Wafer (100), 2" dia x 0.5 mm, 1SP, N type, As doped R<=0.005 ohm.cm - SIAsa50D05C1R0005
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Ships within 48 hours · Estimated delivery Jul 14 - Jul 19
Description
Si Wafer (100), 2" dia x 0.5 mm, 1SP, N type, As doped R<=0.005 ohm.cm - SIAsa50D05C1R0005Single crystal Silicon Conductive type: N type As doped Resistivity: R: <=0. 005 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 5 + 0. 025 mm Orientation: (100) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma
Diameter: 40 mm (1
Nominal GaN Thickness: 15 um +/- 10 %
Package: under 1000 class clean room
MAX Temp: 450
Surface Polishing: Two sides polished
Tape Thickness (w/o liner) 6
it's a standard test battery for 8 Channel Battery Analyzer - BST8-5V40A-RT
or substrate with regular ( 5x5
1º miscut from (100) ( +/- 0
125 mm (+/-0
You may remove the gauge and use 1/4 female port to inject electrolyte into the pouch cell
Resistivity: N/A
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