Si Wafer (110), 2" dia x 0.5 mm t, 2SP, P type/ B doped, R:0.1-1.0ohm-cm

Si Wafer (110), 2" dia x 0.5 mm t, 2SP, P type/ B doped, R:0.1-1.0ohm-cmSingle crystal Silicon Conductive type: P type Boron doped Resistivity: 0. 1 1. 0 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 5 + 0. 025 mm Orientation: (110) + 1o Polish: Two sides polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma

3 deg/ <110>

1” diameter through-hole on the base plate and mount the Quick Connect through this hole

This is a steel two shelves mobile cart for carrying all MTI box and tube furnaces

Typical Purity:

Surface roughness:         < 8 A ( by AFM)

and the latest version testing software are installed and calibrated for immediate use (Up to 20 sets of analyzers can be simultaneously controlled by one PC)

wafer InGaAs EPI on InP (Semi-insulating)(100) by MOCVD deposition

Size:                             3" diameter x 0

The digital pressure gauge is optional

Resistivity: > 100 ohm

Packing:                             50g per bag packed in dry inert gas

Outside Dimension:                     120 x 120 x 13