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SKU:83253366642
Ge Wafer (111) N-type Undoped, 1" dia x 0.5 mm ,1SP, R:>50 ohm.cm
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USA
- USA
- CAN
- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
Ge Wafer (111) N-type Undoped, 1" dia x 0.5 mm ,1SP, R:>50 ohm.cmGe Wafer Specification Growing Method: CZ Orientation: (111) + 0. 5 Deg. Wafer Size: 1" dia x 0. 5 mm Surface Polishing: one side polished Surface roughness: Ra < 10 A ( by AFM) Doping: Undoped Conductor type: N type Resistivity: >50 Ohms cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Package: under 1000 class clean room Typical Properties: Structure: Cubic, a = 5. 6754 A
8Normal0 Aiming to replace of the traditional PVDF binder
Item: Seamless Dry Box Gloves Cuff: 8" dia
repair and operations only
True density: ~5
4H-SiC (0001)
Polished: two sides polished optional
Anticorrosive Coating
0 % Material Safety Data Sheet
With lid open: 340mm(L) × 300mm(W) × 560mm(H)
- 160-180C for lower blade
Black O-Ring for Dry Box Glove of VGB10 - GB6GP-Sor
TYPE: NH20-200*100-28
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Exchange/Return Notes
- We offer a 30-day return/exchange service after receiving.
- Final sale items are not eligible for returns or exchanges.
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