Si Wafer (111) 2" dia x 0.5 mm, 1SP, P type, B doped, R:1-10 ohm-cm - SIBc50D05C1R1

Si Wafer (111) 2" dia x 0.5 mm, 1SP, P type, B doped, R:1-10 ohm-cm - SIBc50D05C1R1Single crystal Silicon Conductive type: P type Boron doped Resistivity: 1 10 ohm cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Size: 50. 8 diameter + 0. 5 mm x 0. 5 + 0. 025 mm Orientation: (111) + 1o Polish: one side polished Surface roughness: < 5A Optional: you may need tool below to handle the wafer ( click picture to order ) Other Crystal wafer A Z Plasma Cleaner

Quartz blocks (optional) are ideal for clean & Hight vacuum

Blade Diameter 86mm OD x 70 mm ID

Conductor type:                         S-C-N

1 mm Thickness

This aluminum foil (15um thickness with optional 180mm or 230mm width ) is used as substrate (Al current collectors) for coating cathode materials in Li-Ion rechargeable battery research

Enhanced performance of sulfone-based electrolytes at lithium ion battery electrodes

Can run one test cycle to check capacity or thousands to test battery life

A KF40 glovebox Feedthrough Set (with the necessary connector to gas cylinder) is included for connecting an inert gas source to the crimper inside the glove box

1 - 10 ohm-cm (If you would like to measure the resistivity accurately

Polishing:             one-side side polishd ( back side etched )

you may use Air Compressor

such quartz thermal blocks have no detrimental impacts on the vacuuming