SKU:78051689021
GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp
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- USA
- CAN
Ships within 48 hours · Estimated delivery Jul 12 - Jul 17
Description
GaP wafer, S doped, (100), 5 x 5 x 0.5 mm, 1sp(GaP single crystal wafer Size: 5mmx5mmx0. 5mm Doping: S doped, Conducting type: N type Orientation: (100)+_30' Polished: One side polished. Surface finish (RMS or Ra) : < 8A Typical Physical Properties Crystal Structure Cubic. a =5. 4505 ? FONT> Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100> or <111> Conducting Type N N Carrier Concentration
highly conductive graphene-based materials with exceptional mechanical strength
5mm(ID) x 67mm(H)
Bulk density: 0
Size: 5x5x5
Resistivity: 10-15 Ohm
Current Collector (Substrate) Aluminum foil Cathode Material Lithium-Manganese Oxide Dimensions 670mm(L) x 56mm(W) x 0
Size: 5 mm x 5 mm x 0
liquid-vapor may condense and corrode the steel chamber and purification pipeline
MSK-T-07 is a compact precision disc cutter with 4 sets of cutting die ( 15
Composition: (Y2O3)0
Specification Normal 0 7
Ra(Average Roughness) : < 0
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