GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2

GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2GaP single crystal wafer, Size: 10mm x 10 mm x 0. 35 mm, Doping: undoped, Conducting type: N type, Orientation: (111) Polished: Two sides Surface finish (RMS or Ra) :: < 8A price is for one piece Typical Physical Properties Crystal Structure Cubic. a =5. 4505 Growth Method CZ (LEC) Density 4. 13 g cm3 Melt Point 1480 oC Thermal Expansion 5. 3 x10 6 oC Dopant S doped undoped Crystal growth axis <111> or <100> <100> or <111> Conducting Type N N Carrier

Chemical inertness and stability

(110V version is available with a 3000W transformer Motor Power AC Motor with 1

Application Notes:

Surface Finish: Front sides: Epi- polished Ra<0

PTL-MM01 is a CE certified Desktop Dip Coater designed for R&D Lab to prepare various optical or epitaxial films from a liquid solution

2)x10^-2 ohm

15" OD larger diameter Alumina tube is made of high purity 95% Al2O3 material

constant power discharge (CP)

Attention For the best grinding effects

Good lattice matches with perovskite structure superconductors

Dimension  Click the picture for more details

It is safer and faster than to push down along the cut-off saw